NPN Darlington bipolar power transistor for general-purpose amplification and low-speed switching. It supports 60 V collector-emitter breakdown voltage and 5 A maximum collector current in a through-hole TO-220-3 package. The device is specified for 4 V maximum collector-emitter saturation at 20 mA base current and 5 A collector current, with 1000 minimum DC current gain at 3 A and 3 V. Junction temperature is rated to 150°C.
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| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 5A |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | No |
| RoHS | Not Compliant |
