N-channel enhancement mode power MOSFET rated for 45 V drain-source voltage and 58 A continuous drain current at 25°C. It is specified with low on-resistance of 10 mΩ maximum at 10 V gate drive and 18 mΩ maximum at 4.5 V, plus 36.8 nC typical total gate charge. The device is offered in a TO-252-2L package with 65 W maximum power dissipation, 240 mJ single-pulse avalanche energy, and a -55°C to 175°C junction and storage temperature range. Intended applications include load switching, hard-switched high-frequency circuits, and uninterruptible power supplies.
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NCE Power NCE4558K technical specifications.
| Drain-Source Voltage | 45V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 58A |
| Continuous Drain Current at 100°C | 41A |
| Pulsed Drain Current | 200A |
| Maximum Power Dissipation | 65W |
| Derating Factor | 0.43W/℃ |
| Single Pulse Avalanche Energy | 240mJ |
| Operating Junction and Storage Temperature Range | -55 to 175℃ |
| Thermal Resistance Junction-to-Case | 2.3℃/W |
| Drain-Source On-Resistance at VGS=10V | 10 maxmΩ |
| Drain-Source On-Resistance at VGS=4.5V | 18 maxmΩ |
| Gate Threshold Voltage | 1.2 to 2.5V |
| Forward Transconductance | 20 minS |
| Input Capacitance | 1800 typpF |
| Output Capacitance | 182 typpF |
| Reverse Transfer Capacitance | 138 typpF |
| Total Gate Charge | 36.8 typnC |
| Package Type | TO-252-2L |
| Lead-free | Pb Free Product |
