This device is an N-channel enhancement-mode power MOSFET built with advanced trench technology. It is rated for 50 V drain-source voltage and 80 A continuous drain current at 25 °C, with 56.5 A continuous current at 100 °C case temperature. The datasheet specifies low on-resistance of 7.5 mΩ maximum at 10 V gate drive and 9.0 mΩ maximum at 4.5 V gate drive, along with 65 nC typical total gate charge. It is supplied in a TO-252-2L package and supports operation from -55 °C to 175 °C junction temperature. Typical applications include load switching, hard-switched high-frequency circuits, and uninterruptible power supplies.
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NCE Power NCE5080K technical specifications.
| Drain-Source Voltage | 50V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Continuous Drain Current @ TC=100 °C | 56.5A |
| Pulsed Drain Current | 320A |
| Maximum Power Dissipation | 100W |
| Single Pulse Avalanche Energy | 400mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance, Junction-to-Case | 1.5°C/W |
| Gate Threshold Voltage | 0.8 min, 1.2 typ, 1.8 maxV |
| Drain-Source On-Resistance @ VGS=10 V, ID=20 A | 5.6 typ, 7.5 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5 V, ID=15 A | 6.7 typ, 9.0 maxmΩ |
| Forward Transconductance | 20 typS |
| Input Capacitance | 3600 typpF |
| Output Capacitance | 340 typpF |
| Reverse Transfer Capacitance | 230 typpF |
| Total Gate Charge | 65 typnC |
| Reverse Recovery Time | 36 typns |
| Lead-free | Yes |
