This device is an N-channel enhancement mode power MOSFET built with advanced trench technology for low on-resistance and low gate charge. It is rated for 55 V drain-source voltage, 110 A continuous drain current at 25°C, and 200 W maximum power dissipation. The MOSFET is supplied in a TO-220-3L package and operates over a junction temperature range of -55°C to 175°C. The datasheet identifies it as a Pb-free product and specifies typical RDS(on) of 5.5 mΩ at VGS = 10 V.
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NCE Power NCE55H11 technical specifications.
| MOSFET Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 55V |
| Continuous Drain Current | 110A |
| Continuous Drain Current @ Tc=100°C | 80A |
| Pulsed Drain Current | 390A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 200W |
| Drain-Source On-Resistance | 5.5 typ, 7.5 max @ VGS=10V, ID=40AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Forward Transconductance | 50S |
| Input Capacitance | 3200pF |
| Output Capacitance | 780pF |
| Reverse Transfer Capacitance | 210pF |
| Total Gate Charge | 76 typ, 140 maxnC |
| Single Pulse Avalanche Energy | 1100mJ |
| Thermal Resistance Junction-to-Case | 0.75°C/W |
| Operating Junction Temperature Range | -55 to 175°C |
| Reverse Recovery Time | 65 typ, 100 maxns |
| Diode Forward Voltage | 0.85 typ, 1.2 maxV |
| Lead-free | Pb Free Product |
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