This device is an N-channel enhancement mode power MOSFET in a TO-220-3L package. It is rated for 55 V drain-source voltage and 120 A continuous drain current at 25°C, with 85 A continuous current at 100°C case temperature. The device specifies a maximum on-state resistance of 5.5 mΩ at 10 V gate drive, with 4.1 mΩ typical, and a total gate charge of 125 nC. It supports 200 W power dissipation, 1100 mJ single-pulse avalanche energy, and a -55°C to 175°C junction and storage temperature range. The datasheet identifies it as a Pb-free product for power switching, hard-switched high-frequency circuits, and uninterruptible power supply applications.
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NCE Power NCE55H12 technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 55V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 120A |
| Continuous Drain Current at 100°C | 85A |
| Pulsed Drain Current | 420A |
| Power Dissipation | 200W |
| Single Pulse Avalanche Energy | 1100mJ |
| Thermal Resistance Junction-to-Case | 0.75°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance | 5.5 max, 4.1 typmΩ |
| Input Capacitance | 4900pF |
| Output Capacitance | 470pF |
| Reverse Transfer Capacitance | 460pF |
| Total Gate Charge | 125nC |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Lead Free | Pb Free Product |
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