This device is an N-channel enhancement-mode power MOSFET built with trench technology for low on-resistance and low gate charge. It is rated for 60 V drain-source voltage and 9 A continuous drain current at 25°C, with 15 mΩ maximum RDS(on) at 10 V gate drive and 10 mΩ typical. The part is supplied in an SOP-8 package and supports pulsed drain current up to 36 A. Its operating junction and storage temperature range is -55°C to 150°C, and the datasheet identifies it as a Pb-free product.
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NCE Power NCE6009AS technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 9A |
| Continuous Drain Current at TC=100°C | 6.4A |
| Pulsed Drain Current | 36A |
| Power Dissipation | 2.6W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Ambient | 48°C/W |
| Zero Gate Voltage Drain Current | 1 maxµA |
| Gate-Body Leakage Current | ±100 maxnA |
| Gate Threshold Voltage | 1.2 to 2.2V |
| Drain-Source On-State Resistance | 10 typ, 15 max @ VGS=10V, ID=9AmΩ |
| Forward Transconductance | 25S |
| Input Capacitance | 2180pF |
| Output Capacitance | 350pF |
| Reverse Transfer Capacitance | 270pF |
| Turn-on Delay Time | 8.5ns |
| Turn-on Rise Time | 6ns |
| Turn-off Delay Time | 30ns |
| Turn-off Fall Time | 5ns |
| Total Gate Charge | 58nC |
| Gate-Source Charge | 8nC |
| Gate-Drain Charge | 17nC |
| Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 30ns |
| Reverse Recovery Charge | 44nC |
| Pb Free | Yes |
