This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 12 A continuous drain current. It is designed with trench technology to provide low drain-to-source on-resistance and low gate charge for switching applications. The part supports 3 W power dissipation, operates over a junction and storage temperature range of -55 °C to 150 °C, and is offered in an SOP-8 surface-mount package. Typical dynamic characteristics include 93 nC total gate charge, 4100 pF input capacitance, and nanosecond-scale switching times. It is intended for power switching and load-switch applications.
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NCE Power NCE6012AS technical specifications.
| Channel type | N-Channel |
| Drain-source voltage | 60V |
| Continuous drain current | 12A |
| Continuous drain current at TC=100°C | 8.5A |
| Pulsed drain current | 30A |
| Power dissipation | 3W |
| Gate-source voltage | ±20V |
| RDS(on) at VGS=10V | 8 maxmΩ |
| RDS(on) at VGS=4.5V | 9 maxmΩ |
| Gate threshold voltage | 0.9 to 1.8V |
| Forward transconductance | 40 minS |
| Input capacitance | 4100 typpF |
| Output capacitance | 298 typpF |
| Reverse transfer capacitance | 229 typpF |
| Total gate charge | 93 typnC |
| Turn-on delay time | 8.5 typns |
| Turn-off delay time | 40 typns |
| Operating junction and storage temperature range | -55 to 150°C |
| Thermal resistance junction-to-ambient | 42°C/W |
| RoHS | Compliant |
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