This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 75 A continuous drain current at 25 °C, with 50 A at 100 °C. It features 9.1 mΩ typical on-resistance and 11.5 mΩ maximum at VGS = 10 V and ID = 30 A, plus a typical total gate charge of 50 nC. The device is supplied in a TO-252-2L package and supports up to 110 W power dissipation, 450 mJ single-pulse avalanche energy, and a -55 °C to 175 °C junction and storage range. Typical capacitance values are 2350 pF input, 237 pF output, and 205 pF reverse transfer, and the datasheet marks the product as Pb-free.
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NCE Power NCE6075K technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 75A |
| Continuous Drain Current at 100 C | 50A |
| Pulsed Drain Current | 300A |
| On-Resistance Typ | 9.1mΩ |
| On-Resistance Max | 11.5mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation | 110W |
| Single Pulse Avalanche Energy | 450mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.36°C/W |
| Input Capacitance | 2350pF |
| Output Capacitance | 237pF |
| Reverse Transfer Capacitance | 205pF |
| Total Gate Charge | 50nC |
| Gate-Source Charge | 12nC |
| Gate-Drain Charge | 16nC |
| Diode Forward Voltage | 1.2V |
| Reverse Recovery Time | 28ns |
| Reverse Recovery Charge | 49nC |
| Pb-free | Yes |
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