This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 80 A continuous drain current. It is offered in a TO-220-3L through-hole package and is specified for operation from -55 °C to +175 °C. Typical on-resistance is 6.5 mΩ at 10 V gate drive and 7.5 mΩ at 4.5 V gate drive. The device is rated for 110 W power dissipation, with typical gate charge of 90.3 nC at 30 V, input capacitance of 4 nF, and reverse transfer capacitance of 210 pF. It is intended for PWM and load-switching applications.
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NCE Power NCE6080A technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| On-Resistance RDS(on) | 6.5 @ VGS=10VmΩ |
| On-Resistance RDS(on) | 7.5 @ VGS=4.5VmΩ |
| Gate Threshold Voltage | 1.3V |
| Power Dissipation | 110W |
| Input Capacitance (Ciss) | 4nF |
| Reverse Transfer Capacitance (Crss) | 210pF |
| Gate Charge (Qg) | 90.3 @ VDS=30VnC |
| Operating Temperature | -55 to +175°C |
| RoHS | RoHS |
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