This device is a trench N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 80 A continuous drain current at 25°C. It provides low on-resistance with typical values of 6 mΩ at 10 V gate drive and 7 mΩ at 4.5 V gate drive, and it is characterized for avalanche voltage and current. The part is supplied in a TO-252-2L package and is specified for operation from -55°C to 175°C junction temperature. Typical dynamic characteristics include 90.3 nC total gate charge, 4000 pF input capacitance, and 32 ns reverse recovery time. It is designated as a Pb-free product and is intended for PWM and load-switching applications.
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NCE Power NCE6080AK technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Technology | Trench |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Continuous Drain Current at 100°C | 56.5A |
| Pulsed Drain Current | 320A |
| Power Dissipation | 110W |
| Single Pulse Avalanche Energy | 390mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.36°C/W |
| Gate Threshold Voltage | 0.8 to 1.8V |
| Drain-Source On-Resistance at VGS=10V | 6 typ, 6.9 maxmΩ |
| Drain-Source On-Resistance at VGS=4.5V | 7 typ, 8 maxmΩ |
| Forward Transconductance | 20 typS |
| Input Capacitance | 4000 typpF |
| Output Capacitance | 290 typpF |
| Reverse Transfer Capacitance | 210 typpF |
| Total Gate Charge | 90.3 typnC |
| Gate-Source Charge | 10.9 typnC |
| Gate-Drain Charge | 20.6 typnC |
| Reverse Recovery Time | 32 typns |
| Reverse Recovery Charge | 45 typnC |
| Package | TO-252-2L |
| Pb-free | Yes |
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