This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 80 A continuous drain current in a TO-252-2L surface-mount package. It features 8.5 mΩ maximum RDS(on) at 10 V gate drive, 110 W power dissipation, and 90 nC total gate charge. The device supports 390 mJ single-pulse avalanche energy and operates from -55 °C to 175 °C junction temperature. It is specified for PWM and load-switching applications and is marked as a Pb-free product.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NCE Power NCE6080K datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NCE Power NCE6080K technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Continuous Drain Current @ 100°C | 56.5A |
| Pulsed Drain Current | 320A |
| Power Dissipation | 110W |
| Gate-Source Voltage | ±20V |
| On-Resistance RDS(on) | 8.5 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 90nC |
| Input Capacitance | 4000pF |
| Output Capacitance | 290pF |
| Reverse Transfer Capacitance | 210pF |
| Single Pulse Avalanche Energy | 390mJ |
| Thermal Resistance Junction-to-Case | 1.36°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Reverse Recovery Time | 32ns |
| Reverse Recovery Charge | 45nC |
| Diode Forward Voltage | 1.2V |
| RoHS | Yes |
| Pb-free | Yes |
Download the complete datasheet for NCE Power NCE6080K to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
