This device is a 60 V N-channel enhancement-mode power MOSFET rated for 100 A continuous drain current at 25°C and 70 A at 100°C. It is housed in a TO-220-3L package and is specified with 5.7 mΩ typical and 6.5 mΩ maximum on-resistance at 10 V gate drive. The MOSFET supports 170 W power dissipation, 550 mJ single-pulse avalanche energy, and a -55°C to 175°C junction and storage temperature range. It is intended for power switching, hard-switched high-frequency circuits, and uninterruptible power supply applications, and the datasheet identifies it as a Pb-free product.
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NCE Power NCE60H10 technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Continuous Drain Current at 100°C | 70A |
| Pulsed Drain Current | 320A |
| Maximum Power Dissipation | 170W |
| Single Pulse Avalanche Energy | 550mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.88°C/W |
| Drain-Source On-Resistance | 5.7 typ, 6.5 maxmΩ |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Forward Transconductance | 50S |
| Input Capacitance | 4800pF |
| Output Capacitance | 440pF |
| Reverse Transfer Capacitance | 260pF |
| Turn-On Delay Time | 16.8ns |
| Turn-On Rise Time | 10.8ns |
| Turn-Off Delay Time | 55ns |
| Turn-Off Fall Time | 13.6ns |
| Total Gate Charge | 85nC |
| Gate-Source Charge | 18nC |
| Gate-Drain Charge | 28nC |
| Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 38ns |
| Reverse Recovery Charge | 53nC |
| Pb Free | Yes |
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