This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 100 A continuous drain current in a TO-220F package. The datasheet specifies up to 6.5 mΩ drain-source on-resistance at 10 V gate drive, 45 W power dissipation, and 550 mJ single-pulse avalanche energy. It supports junction temperatures from -55 °C to 175 °C and includes an intrinsic body diode with 38 ns reverse recovery time. The device is intended for power switching, hard-switched high-frequency circuits, and uninterruptible power supply applications.
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NCE Power NCE60H10F technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Continuous Drain Current (Tc=100°C) | 70A |
| Pulsed Drain Current | 320A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 5.7 typ, 6.5 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation | 45W |
| Single Pulse Avalanche Energy | 550mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Input Capacitance | 4800 typpF |
| Output Capacitance | 440 typpF |
| Reverse Transfer Capacitance | 260 typpF |
| Total Gate Charge | 85 typnC |
| Reverse Recovery Time | 38 typns |
| Reverse Recovery Charge | 53 typnC |
| Body Diode Forward Voltage | 1.2 maxV |
| Thermal Resistance Junction-to-Case | 3.3°C/W |
| Pb-free | Yes |
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