This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 115 A continuous drain current at 25 °C. It uses trench technology to achieve 6.5 mΩ typical on-resistance at 10 V gate drive with 114 nC typical total gate charge, and it supports 1200 mJ single-pulse avalanche energy. The device is offered in a TO-220-3L package, operates from -55 °C to 175 °C junction temperature, and is marked as a Pb-free product.
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NCE Power NCE60H12 technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 115A |
| Continuous Drain Current at 100°C | 81A |
| Gate-Source Voltage | ±20V |
| Pulsed Drain Current | 400A |
| Power Dissipation | 210W |
| Single Pulse Avalanche Energy | 1200mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.71°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance | 6.5 typ, 7.5 maxmΩ |
| Forward Transconductance | 60S |
| Input Capacitance | 4700pF |
| Output Capacitance | 450pF |
| Reverse Transfer Capacitance | 270pF |
| Total Gate Charge | 114nC |
| Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 43ns |
| Reverse Recovery Charge | 93nC |
| Pb Free | Yes |
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