This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 150 A continuous drain current at 25°C. It uses advanced trench technology to provide low on-resistance and low gate charge, with a typical RDS(on) of 3.4 mΩ and a maximum of 4.5 mΩ at VGS = 10 V. The part is supplied in a TO-220-3L package and supports operation from -55°C to 175°C junction temperature. The datasheet lists 1400 mJ single-pulse avalanche energy, 0.68 °C/W junction-to-case thermal resistance, and Pb-free construction. Typical applications include power switching, hard-switched high-frequency circuits, and uninterruptible power supplies.
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NCE Power NCE60H15 technical specifications.
| Drain-Source Voltage | 60V |
| Drain Current Continuous | 150A |
| Drain Current Continuous at 100°C | 105A |
| Pulsed Drain Current | 600A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance Typ | 3.4mΩ |
| Drain-Source On-Resistance Max | 4.5mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Single Pulse Avalanche Energy | 1400mJ |
| Junction-to-Case Thermal Resistance | 0.68°C/W |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Drain-Source Breakdown Voltage Typ | 68V |
| Zero Gate Voltage Drain Current Max | 1µA |
| Gate-Body Leakage Current Max | ±100nA |
| Forward Transconductance Min | 180S |
| Pb Free | Yes |
