This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 150 A continuous drain current at 25°C. It uses advanced trench technology to achieve low on-resistance, with RDS(on) specified up to 4.5 mΩ at 10 V gate drive. The transistor is supplied in a TO-263-2L surface-mount package and supports a maximum power dissipation of 220 W with 0.68 °C/W junction-to-case thermal resistance. It is specified for junction temperatures from -55°C to 175°C and is marked as a Pb-free product.
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NCE Power NCE60H15D technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 150A |
| Continuous Drain Current @ 100°C | 105A |
| Pulsed Drain Current | 600A |
| Power Dissipation | 220W |
| Drain-Source On Resistance | 4.5 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 113nC |
| Input Capacitance | 4644pF |
| Output Capacitance | 460pF |
| Reverse Transfer Capacitance | 426pF |
| Thermal Resistance Junction-to-Case | 0.68°C/W |
| Single Pulse Avalanche Energy | 1400mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Body Diode Forward Voltage | 1.2V |
| Reverse Recovery Time | 60 maxns |
| Reverse Recovery Charge | 80 maxnC |
| Lead Free | Yes |
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