This N-channel power MOSFET is rated for 60 V drain-to-source voltage and 9 A continuous drain current. It is supplied in an SOP-8 surface-mount package and has 15 mΩ on-resistance at 10 V gate drive. The device is specified for 58 nC gate charge at 30 V, 2.18 nF input capacitance, and 270 pF reverse transfer capacitance. Operating temperature is -55 °C to +150 °C and power dissipation is 2.6 W.
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NCE Power NCE60ND09AS technical specifications.
| Channel Configuration | 1 N-channel |
| Mounting Type | Surface Mount |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 9A |
| Power Dissipation | 2.6W |
| Gate Charge | 58 @ 30 VnC |
| Gate Threshold Voltage | 2.2V |
| Reverse Transfer Capacitance | 270pF |
| RDS(on) | 15 @ 10 VmΩ |
| Input Capacitance | 2.18nF |
| Operating Temperature | -55 to +150°C |
| RoHS | Compliant |
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