This device is an N-channel power MOSFET built on SJ-IV NF technology and packaged in TO-220F. It is rated for 600 V drain-source voltage and 38 A drain current. Typical RDS(on) at 10 V is 70 mΩ, with 80 mΩ maximum. The family table lists 35.1 W power dissipation, a 3.5 V VTH value, fast recovery behavior, and a Coming Soon product status.
Checking distributor stock and pricing after the page loads.
NCE Power NCE60NF080F technical specifications.
| Technology | SJ-IV NF |
| Channel Type | N-Channel |
| Drain-Source Voltage | 600V |
| Drain Current | 38A |
| VTH | 3.5V |
| RDS(on) Typ @ 10V | 70mΩ |
| RDS(on) Max @ 10V | 80mΩ |
| Power Dissipation | 35.1W |
| Special Feature | Fast Recovery |
