This N-channel power MOSFET uses SJ-IV NF technology and is offered in a TO-247 package. It is rated for 600 V drain-source voltage, 38 A drain current, and 316 W power dissipation. The device lists a typical threshold voltage of 3.5 V, typical on-resistance of 70 mΩ at 10 V gate drive with 80 mΩ maximum, and a fast-recovery feature.
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NCE Power NCE60NF080T technical specifications.
| Technology | SJ-IV NF |
| Channel Type | N-Channel |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 38A |
| Threshold Voltage | 3.5V |
| On-Resistance @ 10V Gate Drive (Typ) | 70mΩ |
| On-Resistance @ 10V Gate Drive (Max) | 80mΩ |
| Power Dissipation | 316W |
| Special Feature | Fast Recovery |
