N-channel enhancement-mode trench power MOSFET is rated for 82 V drain-source voltage and 90 A continuous drain current. The device provides low on-resistance of 7.5 mΩ typical at 10 V gate drive and supports 320 A pulsed drain current. It is supplied in a TO-220-3L package with 170 W maximum power dissipation, 0.88 °C/W junction-to-case thermal resistance, and a -55 °C to 175 °C junction and storage temperature range.
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| MOSFET channel type | N-channel |
| Drain-source voltage | 82V |
| Continuous drain current | 90A |
| Continuous drain current at 100 °C | 63A |
| Pulsed drain current | 320A |
| Gate-source voltage | ±20V |
| Maximum power dissipation | 170W |
| Drain-source on-resistance | 7.5 typ, 8.5 max at VGS=10 V, ID=40 AmΩ |
| Gate threshold voltage | 2 min, 2.9 typ, 4 maxV |
| Forward transconductance | 50 typS |
| Total gate charge | 85.7 typnC |
| Input capacitance | 4871 typpF |
| Output capacitance | 630.6 typpF |
| Reverse transfer capacitance | 410.3 typpF |
| Single pulse avalanche energy | 550mJ |
| Thermal resistance junction-to-case | 0.88°C/W |
| Operating junction and storage temperature | -55 to 175°C |
| Diode forward voltage | 1.2 maxV |
| Pb Free | Yes |
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