N-channel enhancement-mode power MOSFET uses trench technology to provide low on-resistance and low gate charge for PWM, load switching, and general-purpose power switching. The device is rated for 82 V drain-source voltage, 90 A continuous drain current, and 170 W maximum power dissipation in a TO-220-3L package. Typical on-resistance is 7.5 mΩ at 10 V gate drive, with an 8.8 mΩ maximum rating under the same condition. The operating junction and storage temperature range is -55 °C to 175 °C, and the product is marked as Pb-free.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 82V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 90A |
| Continuous Drain Current at Tc=100°C | 63.6A |
| Pulsed Drain Current | 320A |
| Maximum Power Dissipation | 170W |
| Power Derating Factor | 1.13W/°C |
| Single Pulse Avalanche Energy | 676mJ |
| Operating Junction and Storage Temperature | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.88°C/W |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Drain-Source On-State Resistance | 7.5 typ, 8.8 max at VGS=10V, ID=20AmΩ |
| Forward Transconductance | 30 minS |
| Input Capacitance | 3364 typpF |
| Output Capacitance | 297 typpF |
| Reverse Transfer Capacitance | 258 typpF |
| Turn-On Delay Time | 18 typns |
| Turn-Off Delay Time | 56 typns |
| Total Gate Charge | 89.5 typnC |
| Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Charge | 54 typnC |
| Lead Free | Pb Free Product |
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