N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 82 V drain-source voltage, 90 A continuous drain current at 25 °C, and 170 W maximum power dissipation. It has a typical drain-source on-resistance of 7.5 mΩ at 10 V gate drive and 40 A drain current. The TO-220-3L package supports power switching, hard-switched circuits, high-frequency circuits, and uninterruptible power supply applications.
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| FET Type | N-channel enhancement mode power MOSFET |
| Drain-Source Voltage | 82V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 90A |
| Continuous Drain Current at 100°C | 63A |
| Pulsed Drain Current | 320A |
| Maximum Power Dissipation | 170W |
| Single Pulse Avalanche Energy | 550mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.88°C/W |
| Drain-Source On-State Resistance | 7.5 typical, 8.5 maximum at VGS=10 V, ID=40 AmΩ |
| Gate Threshold Voltage | 2 min, 2.9 typ, 4 maxV |
| Forward Transconductance | 50 typicalS |
| Input Capacitance | 4871 typicalpF |
| Total Gate Charge | 85.7 typicalnC |
| Diode Forward Voltage | 1.2 maximumV |
| Lead Free | Pb Free Product |
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