N-channel power MOSFET uses Super Trench II technology for low conduction and switching losses. The device is rated for 100 V drain-source voltage and 52 A continuous drain current in a TO-220F package. Typical on-resistance is 6.7 mΩ at 10 V gate drive, with 53 nC total gate charge and 40 W maximum power dissipation. The operating junction and storage temperature range is -55 °C to 175 °C. Pb-free lead plating and RoHS compliance are indicated.
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| MOSFET channel type | N-Channel |
| Technology | Super Trench II |
| Drain-source voltage | 100V |
| Continuous drain current | 52A |
| Continuous drain current at Tc=100°C | 37A |
| Pulsed drain current | 208A |
| Maximum power dissipation | 40W |
| Drain-source on-resistance | 6.7 typ, 7.3 max at VGS=10V, ID=26AmΩ |
| Gate threshold voltage | 2.0 min, 3.0 typ, 4.0 maxV |
| Total gate charge | 53 typ at VGS=10VnC |
| Input capacitance | 3200 typpF |
| Output capacitance | 360 typpF |
| Reverse transfer capacitance | 18 typpF |
| Turn-on delay time | 20 typns |
| Turn-on rise time | 59 typns |
| Turn-off delay time | 39 typns |
| Turn-off fall time | 11 typns |
| Thermal resistance, junction-to-case | 3.75°C/W |
| Operating junction and storage temperature | -55 to 175°C |
| RoHS | Compliant |
| Lead Finish | Pb-free lead plating |
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