N-channel super trench power MOSFET rated for 30 V drain-source voltage and 210 A continuous drain current at 25°C. It provides typical on-resistance of 0.72 mΩ at 10 V gate drive and 0.85 mΩ at 4.5 V, with 137 nC total gate charge and 8085 pF input capacitance. The device supports 180 W power dissipation, 1800 mJ single-pulse avalanche energy, and a -55°C to 150°C operating and storage temperature range. PDFN 5x6-8L packaging, Pb-free lead plating, and 5000-unit reel packaging suit high-frequency switching, synchronous rectification, and DC/DC converter designs.
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NCE Power NCEP30T21GU technical specifications.
| Channel Type | N-Channel |
| Technology | Super Trench |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 210A |
| Continuous Drain Current at 100°C | 160A |
| Pulsed Drain Current | 840A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 180W |
| Single Pulse Avalanche Energy | 1800mJ |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.69°C/W |
| Drain-Source On-Resistance at VGS=10V | 0.72 typmΩ |
| Drain-Source On-Resistance at VGS=4.5V | 0.85 typmΩ |
| Gate Threshold Voltage | 1.0 to 2.0V |
| Input Capacitance | 8085pF |
| Output Capacitance | 2123pF |
| Reverse Transfer Capacitance | 121pF |
| Total Gate Charge | 137nC |
| Package | PDFN5X6-8L |
| Lead Plating | Pb-free |
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