This device is an N-channel Super Trench power MOSFET rated for 60 V drain-source voltage and 15 A continuous drain current at 25 °C. It is intended for high-frequency switching and synchronous rectification in DC/DC converter applications. The MOSFET provides typical on-resistance of 8.3 mΩ at 10 V gate drive and 9.7 mΩ at 4.5 V gate drive, with total gate charge of 34.8 nC. It is supplied in an SOP-8 package and supports junction operation up to 150 °C. The device uses Pb-free lead plating.
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NCE Power NCEP6015AS technical specifications.
| Transistor Type | N-Channel MOSFET |
| Technology | Super Trench |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 15A |
| Continuous Drain Current at 100°C | 10.5A |
| Pulsed Drain Current | 60A |
| Power Dissipation | 3W |
| Avalanche Energy | 350mJ |
| Operating Junction Temperature Max | 150°C |
| Storage Temperature Min | -55°C |
| Storage Temperature Max | 150°C |
| Thermal Resistance Junction-to-Ambient | 41.7°C/W |
| Gate Threshold Voltage | 1.2 to 2.4V |
| On-Resistance at VGS=10V | 8.3 typ, 10.0 maxmΩ |
| On-Resistance at VGS=4.5V | 9.7 typ, 13.0 maxmΩ |
| Input Capacitance | 2000pF |
| Total Gate Charge | 34.8nC |
| Lead Plating | Pb-free |
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