This device is a 60 V N-channel Super Trench power MOSFET in an SOP-8 package. It is rated for 16 A continuous drain current and uses a low on-resistance structure for high-frequency switching and synchronous rectification. The datasheet specifies typical RDS(on) values of 8.2 mΩ at 10 V gate drive and 9.6 mΩ at 4.5 V gate drive, with a total gate charge of 36.6 nC. It supports junction temperatures up to 150 °C and is identified by the manufacturer as a Pb-free product.
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NCE Power NCEP6016AS technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 16A |
| Pulsed Drain Current | 64A |
| Gate-Source Voltage | ±20V |
| Junction Temperature | 150°C |
| Thermal Resistance Junction-to-Ambient | 41.7°C/W |
| Gate Threshold Voltage | 1.2 to 2.5V |
| Drain-Source On-Resistance @ VGS=10V | 8.2 typmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 9.6 typmΩ |
| Forward Transconductance | 35S |
| Input Capacitance | 2100pF |
| Output Capacitance | 359pF |
| Reverse Transfer Capacitance | 12pF |
| Turn-On Delay Time | 9ns |
| Turn-On Rise Time | 3ns |
| Turn-Off Delay Time | 31ns |
| Turn-Off Fall Time | 5ns |
| Total Gate Charge | 36.6nC |
| Gate-Source Charge | 6.7nC |
| Gate-Drain Charge | 5.8nC |
| Diode Forward Voltage | 1.2V |
| Reverse Recovery Time | 40ns |
| Reverse Recovery Charge | 50nC |
| Pb Free | Yes |
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