This N-channel power MOSFET is rated for 60 V drain-source voltage and is housed in a compact DFN-3 package measuring 3.3 mm by 3.3 mm. It features 6.5 mΩ on-state drain-source resistance, 1.2 V gate-threshold voltage, and 2 nF maximum input capacitance at 30 V. The device supports up to 20 V gate-source voltage and 60 W maximum power dissipation. It is specified for industrial applications over an operating temperature range of -55 °C to 150 °C.
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NCE Power NCEP6050AQU technical specifications.
| FET Type | N-Channel |
| Number of Channels | 1 |
| Drain-Source Breakdown Voltage (Vds) | 60V |
| On-State Drain-Source Resistance (Rds(on)) | 6.5mΩ |
| Gate-Source Threshold Voltage (Vgs(th)) | 1.2V |
| Gate Source Voltage | 20V |
| Max Power Dissipation | 60W |
| Max. Input Capacitance Ciss | 2nF |
| Ciss Test Voltage | 30V |
| Operating Temperature | -55 to 150°C |
| Package / Case (Metric) | DFN-3 |
| Length | 3.3mm |
| Width | 3.3mm |
| Application Level | Industrial |
Download the complete datasheet for NCE Power NCEP6050AQU to view detailed technical specifications.
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