This N-channel super trench power MOSFET is rated for 60 V drain-source voltage and 80 A continuous drain current. It is supplied in a DFN5X6-8L surface-mount package and is specified for 85 W power dissipation with junction operation from -55 °C to 150 °C. The device features low on-resistance of 3.5 mΩ typical at 10 V gate drive and 4.0 mΩ typical at 4.5 V, along with 67 nC total gate charge. It is intended for high-frequency switching and synchronous rectification, and the datasheet identifies it as a Pb-free product with 100% UIS testing.
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NCE Power NCEP6080AG technical specifications.
| Transistor Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Continuous Drain Current at 100C | 58A |
| Pulsed Drain Current | 320A |
| Power Dissipation | 85W |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 3.5 typ @ VGS=10V, ID=40AmΩ |
| Drain-Source On-Resistance | 4.0 typ @ VGS=4.5V, ID=40AmΩ |
| Gate Threshold Voltage | 1.0 to 2.4V |
| Forward Transconductance | 40S |
| Input Capacitance | 4000pF |
| Output Capacitance | 680pF |
| Reverse Transfer Capacitance | 23pF |
| Total Gate Charge | 67nC |
| Gate-Source Charge | 12nC |
| Gate-Drain Charge | 8.5nC |
| Reverse Recovery Time | 48ns |
| Reverse Recovery Charge | 60nC |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.47°C/W |
| RoHS | Yes |
| Lead Free | Pb Free |
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