This N-channel power MOSFET is rated for 60 V drain-to-source voltage and 90 A continuous drain current in a TO-252-2 package. It has 6.4 mΩ on-resistance at 10 V gate drive, 26.9 nC gate charge, and 1.7 nF input capacitance. The device is specified for operation from -55°C to +175°C and for power dissipation up to 100 W. It is intended for high-frequency switching and synchronous rectification applications.
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NCE Power NCEP6090K technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 90A |
| On-Resistance Rds(on) | 6.4 @ 10VmΩ |
| Gate Threshold Voltage | 3V |
| Gate Charge (Qg) | 26.9 @ 10VnC |
| Input Capacitance (Ciss) | 1.7nF |
| Reverse Transfer Capacitance (Crss) | 8pF |
| Power Dissipation | 100W |
| Operating Temperature Range | -55 to +175°C |
| Technology | Super Trench |
| RoHS | Yes |
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