Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features low threshold voltage, very fast switching, and ESD protection up to 2kV.
Nexperia NX3008NBKS,115 technical specifications.
| Drain-Source Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 350mA |
| Drain-Source On-Resistance (Rds On) | 1.4Ohm |
| Gate-Source Threshold Voltage (Vgs th) | 1.1V |
| Total Gate Charge (Qg) | 0.68nC |
| Power Dissipation (Pd) | 310mW |
| Operating Temperature | -55 to 150°C |
| RoHS | Compliant |
| REACH | Unaffected |
No datasheet is available for this part.
