P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features low threshold voltage and very fast switching, designed for relay drivers, high-speed line drivers, and high-side loadswitch applications.
Nexperia NX3008PBKS,115 technical specifications.
| Drain-Source Voltage (Vds) | -30V |
| Continuous Drain Current (Id) | -200mA |
| Drain-Source On-Resistance (Rds On) | 2.8Ohm |
| Gate-Source Threshold Voltage (Vgs th) | -0.95V |
| Total Gate Charge (Qg) | 0.31nC |
| Power Dissipation (Ptot) | 350mW |
| RoHS | Compliant |
| Halogen Free | Yes |
| Aec-q101 | Qualified |
No datasheet is available for this part.
