NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) small surface-mounted plastic package. Features very low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, and high collector current gain hFE at high IC. High energy efficiency due to less heat generation.
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Technical Specifications
Nexperia PBSS305NX technical specifications.
General
| Collector-emitter voltage (VCE) | 80V |
| Collector current (IC) | 4.6A |
| Peak collector current (ICM) | 10A |
| Collector-emitter saturation voltage (VCEsat) typ | 140mV |
| Equivalent on-resistance (RCEsat) max | 54mOhm |
| Total power dissipation (Ptot) | 2500mW |
Compliance
| RoHS | Compliant |
| Aec-q101 | Available (as PBSS305NX-Q) |
Datasheet
Nexperia PBSS305NX Datasheet
Download the complete datasheet for Nexperia PBSS305NX to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.