This device is a standard-level N-channel enhancement-mode power MOSFET built with TrenchMOS technology. It is rated for 150 V drain-source voltage, 28.5 A drain current, and 150 W total power dissipation. The maximum on-resistance is 65 mΩ at 10 V gate drive, and the maximum junction temperature is 175 °C. It is supplied in the SOT78 / TO-220AB package and is intended for computing, communications, consumer, and industrial applications. The manufacturer lists this orderable part as withdrawn and end-of-life.
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Nexperia PHP28NQ15T,127 technical specifications.
| Channel type | N |
| Number of transistors | 1 |
| Drain-source voltage | 150V |
| On-resistance max at VGS = 10 V | 65mΩ |
| Junction temperature max | 175°C |
| Drain current max | 28.5A |
| Gate-drain charge typ | 7.5nC |
| Total gate charge typ at VGS = 10 V | 24nC |
| Total power dissipation max | 150W |
| Reverse recovery charge typ | 170nC |
| Gate threshold voltage typ | 3V |
| Input capacitance typ | 1250pF |
| Output capacitance typ | 185pF |
| Package version | SOT78 |
| Package name | TO-220AB |
| Automotive qualified | No |
| RoHS | Yes |
| Rhf-indicator | Yes |
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