N-channel enhancement-mode MOSFET provides a 100 V drain-source rating with standard-level gate drive. The D2PAK surface-mount package is qualified to 175 °C and uses a 3-terminal SOT404 body with a drain-connected mounting base. On-state resistance is rated at 3.95 mΩ maximum at 10 V gate drive and 25 A drain current. Continuous drain current is package-limited to 120 A at a 25 °C mounting-base temperature, with 405 W total power dissipation under the same condition. The device is intended for hot-swap, load-switch, soft-start, e-fuse, and 48 V telecom rail applications.
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| Transistor polarity | N-channel |
| Technology | Enhancement mode MOSFET |
| Drain-source voltage | 100 maxV |
| Continuous drain current | 120 max, package-limitedA |
| Peak drain current | 780 maxA |
| Total power dissipation | 405 maxW |
| Drain-source on-state resistance | 3.95 max at VGS=10 V, ID=25 A, Tj=25 °CmΩ |
| Typical on-state resistance | 3.36 typ at VGS=10 V, ID=25 A, Tj=25 °CmΩ |
| Gate-source voltage | -20 to 20V |
| Gate-source threshold voltage | 2 typ, 4 max at ID=1 mA, Tj=25 °CV |
| Junction temperature range | -55 to 175°C |
| Thermal resistance junction to mounting base | 0.37 maxK/W |
| Thermal resistance junction to ambient | 50 typK/W |
| Total gate charge | 176 typ, 246 max at ID=25 A, VDS=50 V, VGS=10 VnC |
| Gate-drain charge | 45.2 typ, 77 maxnC |
| Input capacitance | 11692 typ, 16370 maxpF |
| Output capacitance | 657 typ, 887 maxpF |
| Reverse transfer capacitance | 353 typ, 494 maxpF |
| Source-drain diode voltage | 0.79 typ, 1.2 max at IS=25 AV |
| Package body size | 11 x 10 x 4.3mm |
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