The PSMN4R8-100YSEX is an N-channel, standard level MOSFET in the LFPAK56E package. It is rated for 100V and handles a continuous drain current of up to 120A. It features low drain-source on-state resistance (RDSon) and an enhanced SOA (Safe Operating Area), making it suitable for high-performance power switching applications and synchronous rectification.
Temp Range-55 to 175°C
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Technical Specifications
Nexperia PSMN4R8-100YSEX technical specifications.
General
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 120A |
| Drain-Source On-State Resistance (RDSon) Max @ VGS=10V | 0.0048Ω |
| Total Gate Charge (Qg) | 80nC |
| Power Dissipation (Ptot) Max | 294W |
| Operating Temperature | -55 to 175°C |
| Gate-Source Threshold Voltage (VGSth) | 2 to 4V |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Nexperia PSMN4R8-100YSEX Datasheet
Download the complete datasheet for Nexperia PSMN4R8-100YSEX to view detailed technical specifications.
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