N-channel power MOSFET provides a 100 V drain-source rating with 7 mΩ maximum on-resistance at 10 V gate drive. The LFPAK56 surface-mount package is rated for operation up to 175 °C junction temperature and 90 A maximum drain current. The device supports industrial and consumer power conversion uses such as synchronous rectification, BLDC motor control, USB-PD adapters, LED lighting, and half-bridge or full-bridge circuits. The product is end-of-life and uses a RoHS-compliant, halogen-free package.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Nexperia PSMN6R9-100YSF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package version | SOT669 |
| Package name | LFPAK56; Power-SO8 |
| Product status | End of life |
| Channel type | N-channel |
| Number of transistors | 1 |
| Drain-source voltage, maximum | 100V |
| Drain-source on-resistance, maximum at VGS = 10 V | 7mΩ |
| Junction temperature, maximum | 175°C |
| Drain current, maximum | 90A |
| Gate-drain charge, typical | 10.3nC |
| Total gate charge, typical at VGS = 10 V | 50.3nC |
| Total power dissipation, maximum | 238W |
| Recovery charge, typical | 52.4nC |
| Gate-source threshold voltage, typical | 3.3V |
| Automotive qualified | No |
| Input capacitance, typical | 3570pF |
| Output capacitance, typical | 722pF |
| Release date | 2017-03-24 |
| RoHS | Compliant |
| Halogen Free | Halogen and antimony free |
Download the complete datasheet for Nexperia PSMN6R9-100YSF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
