The PSMNR58-30YLH is a high-performance N-channel enhancement mode Power MOSFET. It features NextPowerS3 technology, providing ultra-low on-state resistance and low gate charge. Designed for high efficiency in telecommunications, industrial power supplies, and motor control, it is capable of handling up to 380A and is housed in a robust LFPAK56 (SOT669) package.
Temp Range-55 to 175°C
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Technical Specifications
Nexperia PSMNR58-30YLHX technical specifications.
General
| Drain-source voltage (Vds) | 30V |
| Drain current (Id) | 380A |
| Drain-source on-state resistance (Rds_on) at 10V | 0.58mOhm |
| Gate-source threshold voltage (Vgs_th) | 1.2 to 2.2V |
| Total gate charge (Qg) at 4.5V | 100nC |
| Total power dissipation (Ptot) | 238W |
| Operating temperature | -55 to 175°C |
Compliance
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen-free | Yes |
Datasheet
Nexperia PSMNR58-30YLHX Datasheet
Download the complete datasheet for Nexperia PSMNR58-30YLHX to view detailed technical specifications.
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