The PXN012-60QLJ is a general purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET. It features Trench MOSFET technology and is housed in a thermally efficient MLPAK33 (3.3 mm x 3.3 mm footprint) surface mount package.
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| Drain-source voltage (Vds) | 60V |
| Drain current (Id) Max | 42A |
| Drain-source on-state resistance (Rdson) Max @ 10V | 11.5mOhm |
| Total gate charge (Qg) Typ | 16.4nC |
| Power Dissipation Max | 34.7W |
| Operating Temperature Max | 150°C |
| Single pulse avalanche energy (Eas) | 90mJ |
| RoHS | Compliant |
