This device is an N-channel logic-level enhancement mode MOSFET in a TO-220 package. It is rated for 60 V drain-source voltage and supports 162 A continuous drain current at 25 °C case temperature, with pulsed drain current up to 300 A. Maximum on-resistance is 3.4 mΩ at 10 V gate drive and 4.5 mΩ at 4.5 V gate drive, with typical input capacitance of 5825 pF and total gate charge of 124 nC at 10 V. The device is specified for junction and storage temperatures from -55 °C to 150 °C and is marked halogen-free and lead-free.
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Niko Semiconductor P0306BT technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 162A |
| Continuous Drain Current (Tc=100°C) | 102A |
| Pulsed Drain Current | 300A |
| Drain-Source On-Resistance Max @ VGS=10V | 3.4mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 4.5mΩ |
| Gate Threshold Voltage Max | 2.3V |
| Power Dissipation (Tc=25°C) | 178W |
| Junction-to-Case Thermal Resistance Max | 0.7°C/W |
| Junction-to-Ambient Thermal Resistance Max | 62.5°C/W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Input Capacitance Typical | 5825pF |
| Output Capacitance Typical | 1162pF |
| Reverse Transfer Capacitance Typical | 385pF |
| Total Gate Charge Typical @ VGS=10V | 124nC |
| Gate-Source Charge Typical | 15nC |
| Gate-Drain Charge Typical | 35nC |
| Source-Drain Forward Voltage | 1.3V |
| Reverse Recovery Time | 60ns |
| Halogen Free | Yes |
| Lead Free | Yes |
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