This device is an N-channel enhancement mode MOSFET in a TO-252 package for 60 V applications. The manufacturer selector lists 80 A current capability, 7.5 mΩ maximum RDS(on) at 10 V, 9.5 mΩ maximum at 4.5 V, and a 2.3 V maximum gate threshold. Typical dynamic values include 3844 pF input capacitance, 106 nC total gate charge, and 42 nC gate-drain charge. The datasheet gives 115 W power dissipation at TC = 25 °C, 1.3 °C/W junction-to-case thermal resistance, a -55 °C to 175 °C junction and storage range, and halogen-free lead-free construction.
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Niko Semiconductor P0706BD technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current | 80A |
| RDS(on) Max at VGS=10V | 7.5mΩ |
| RDS(on) Max at VGS=4.5V | 9.5mΩ |
| Gate Threshold Voltage Max | 2.3V |
| Input Capacitance Typical | 3844pF |
| Reverse Transfer Capacitance Typical | 355pF |
| Total Gate Charge Typical | 106nC |
| Gate-Drain Charge Typical | 42nC |
| Power Dissipation at TC=25°C | 115W |
| Junction-to-Case Thermal Resistance | 1.3°C/W |
| Junction and Storage Temperature Range | -55 to 175°C |
| Avalanche Energy | 172mJ |
| Reverse Recovery Time Typical | 41ns |
| Reverse Recovery Charge | 40nC |
| Halogen Free | Yes |
| Lead Free | Yes |
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