This device is a single N-channel power MOSFET in an SOP-8 package. It is rated for 60 V drain-source voltage and 16 A continuous drain current. Maximum on-resistance is 7.5 mΩ at 10 V gate drive and 8.5 mΩ at 4.5 V gate drive. The maximum gate-source voltage is ±20 V and the listed maximum gate threshold voltage is 2.3 V. The product table lists no integrated ESD diode and no Schottky diode.
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Niko Semiconductor P0706BV technical specifications.
| Configuration | Single |
| Channel Type | N |
| ESD Diode | No |
| Schottky Diode | No |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 16A |
| RDS(ON) Max at VGS=10V | 7.5mΩ |
| RDS(ON) Max at VGS=4.5V | 8.5mΩ |
| Gate Threshold Voltage Max | 2.3V |
| Input Capacitance Typical | 3891pF |
| Reverse Transfer Capacitance Typical | 340pF |
| Total Gate Charge Typical | 100nC |
| Gate-Drain Charge Typical | 31nC |
Download the complete datasheet for Niko Semiconductor P0706BV to view detailed technical specifications.
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