The NTE Electronics BC558 is a PNP transistor packaged in a TO-226-3 through-hole package. It can withstand a collector-emitter breakdown voltage of 30V and a maximum collector current of 15nA. The transistor has a maximum operating temperature of 150°C and a maximum power dissipation of 500mW. It is suitable for use in a variety of applications where a high-performance PNP transistor is required.
PackageTO-226-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics BC558 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Max Collector Current | 15nA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Polarity | PNP |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics BC558 Datasheet
Download the complete datasheet for NTE Electronics BC558 to view detailed technical specifications.
No datasheet is available for this part.
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