
High-speed diode for general-purpose rectification. Features a 4ns reverse recovery time and a maximum repetitive reverse voltage of 100V. With an average rectified current of 200mA and a maximum forward surge current of 4A, this component is housed in a DO-35 axial package suitable for through-hole mounting. Operating temperature range spans from -65°C to 200°C, with a maximum power dissipation of 500mW.
NXP 1N4148,113 technical specifications.
| Average Rectified Current | 200mA |
| Package/Case | DO-35 |
| Diameter | 1.85mm |
| Forward Current | 200mA |
| Height | 1.85mm |
| Lead Free | Lead Free |
| Length | 4.25mm |
| Max Forward Surge Current (Ifsm) | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 25nA |
| Max Reverse Voltage (DC) | 100V |
| Max Surge Current | 4A |
| Mount | Through Hole |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 4A |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 4ns |
| Reverse Recovery Time-Max | 4ns |
| RoHS Compliant | Yes |
| Termination | Axial |
| Voltage | 75V |
| Width | 1.85mm |
| RoHS | Compliant |
Download the complete datasheet for NXP 1N4148,113 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
