The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
PackageHermetically sealed leaded glass SOD27 (DO-35)
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Technical Specifications
NXP 1N4448,113 technical specifications.
General
Package Type
Hermetically sealed leaded glass SOD27 (DO-35)
Switching Speed
4ns
Application
General
Application Detail
High-speed switching
Continuous Reverse Voltage
100V
Repetitive Peak Reverse Voltage
100V
Repetitive Peak Forward Current
450mA
Continuous Forward Current
200mA
Non-repetitive Peak Forward Current (t=1us)
4A
Non-repetitive Peak Forward Current (t=1ms)
1A
Non-repetitive Peak Forward Current (t=1s)
0.5A
Total Power Dissipation (Tamb=25°C)
500mW
Storage Temperature
-65 to +200°C
Junction Temperature
200°C
Forward Voltage (1N4148 @ 10mA)
1V
Forward Voltage (1N4448 @ 5mA)
0.62 to 0.72V
Forward Voltage (1N4448 @ 100mA)
1V
Reverse Current (VR=20V)
25nA
Reverse Current (VR=20V, Tj=150°C)
50µA
Reverse Current (1N4448, VR=20V, Tj=100°C)
3µA
Diode Capacitance (f=1MHz, VR=0V)
4pF
Reverse Recovery Time (IF=10mA to IR=60mA)
4ns
Forward Recovery Voltage (IF=50mA, tr=20ns)
2.5V
Thermal Resistance Junction to Tie-point (10mm lead)
240K/W
Thermal Resistance Junction to Ambient (10mm lead)
350K/W
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.80
REACH
Compliant
Military Spec
False
Datasheet
NXP 1N4448,113 Datasheet
Download the complete datasheet for NXP 1N4448,113 to view detailed technical specifications.
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