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Technical Specifications
NXP 1N4448,113 technical specifications.
General
| Package Type | Hermetically sealed leaded glass SOD27 (DO-35) |
| Switching Speed | 4ns |
| Application | General |
| Application Detail | High-speed switching |
| Continuous Reverse Voltage | 100V |
| Repetitive Peak Reverse Voltage | 100V |
| Repetitive Peak Forward Current | 450mA |
| Continuous Forward Current | 200mA |
| Non-repetitive Peak Forward Current (t=1us) | 4A |
| Non-repetitive Peak Forward Current (t=1ms) | 1A |
| Non-repetitive Peak Forward Current (t=1s) | 0.5A |
| Total Power Dissipation (Tamb=25°C) | 500mW |
| Storage Temperature | -65 to +200°C |
| Junction Temperature | 200°C |
| Forward Voltage (1N4148 @ 10mA) | 1V |
| Forward Voltage (1N4448 @ 5mA) | 0.62 to 0.72V |
| Forward Voltage (1N4448 @ 100mA) | 1V |
| Reverse Current (VR=20V) | 25nA |
| Reverse Current (VR=20V, Tj=150°C) | 50µA |
| Reverse Current (1N4448, VR=20V, Tj=100°C) | 3µA |
| Diode Capacitance (f=1MHz, VR=0V) | 4pF |
| Reverse Recovery Time (IF=10mA to IR=60mA) | 4ns |
| Forward Recovery Voltage (IF=50mA, tr=20ns) | 2.5V |
| Thermal Resistance Junction to Tie-point (10mm lead) | 240K/W |
| Thermal Resistance Junction to Ambient (10mm lead) | 350K/W |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP 1N4448,113 Datasheet
Download the complete datasheet for NXP 1N4448,113 to view detailed technical specifications.
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