N-channel MOSFET, TrenchMOS™ series, designed for surface mount applications in a TO-236AB (SOT23) package. Features a continuous drain current of 340mA and a drain-source breakdown voltage of 60V. Offers a low drain-source on-resistance (Rds On) of 3.9 Ohms maximum. Operates with a gate-source voltage (Vgs) up to 15V and a nominal threshold voltage of 2V. Maximum power dissipation is 830mW, with operating temperatures ranging from -65°C to 150°C. RoHS compliant with tin contact plating.
PackageTO-236AB
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP 2N7002K215 technical specifications.
General
| Package/Case | TO-236AB |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 340mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.9R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3.9R |
| Dual Supply Voltage | 75V |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 1mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 3.9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP 2N7002K215 Datasheet
Download the complete datasheet for NXP 2N7002K215 to view detailed technical specifications.
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