N-channel MOSFET, TrenchMOS™ series, designed for surface mount applications in a TO-236AB (SOT23) package. Features a continuous drain current of 340mA and a drain-source breakdown voltage of 60V. Offers a low drain-source on-resistance (Rds On) of 3.9 Ohms maximum. Operates with a gate-source voltage (Vgs) up to 15V and a nominal threshold voltage of 2V. Maximum power dissipation is 830mW, with operating temperatures ranging from -65°C to 150°C. RoHS compliant with tin contact plating.
PackageTO-236AB
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP 2N7002K215 technical specifications.
General
Package/Case
TO-236AB
Contact Plating
Tin
Continuous Drain Current (ID)
340mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
3.9R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3.9R
Dual Supply Voltage
75V
Gate to Source Voltage (Vgs)
15V
Height
1mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
3.9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Termination
SMD/SMT
Threshold Voltage
2V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP 2N7002K215 Datasheet
Download the complete datasheet for NXP 2N7002K215 to view detailed technical specifications.
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