The 2PA1576R,115 is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a maximum power dissipation of 200mW and is packaged in a small outline SC package. The transistor is designed for surface mount applications and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It is compliant with RoHS regulations and is part of the automotive AEC-Q101 series.
PackageSC
MountingSurface Mount
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Technical Specifications
NXP 2PA1576R,115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP 2PA1576R,115 Datasheet
Download the complete datasheet for NXP 2PA1576R,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.