
The 2PD601AQW,115 is a bipolar junction transistor with a collector base voltage of 60V and a maximum collector current of 100mA. It is packaged in a SOT-323 surface mount package and has a maximum power dissipation of 200mW. The transistor operates over a temperature range of -65°C to 150°C and is not radiation hardened. It is not RoHS compliant.
NXP 2PD601AQW,115 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| RoHS | Not CompliantNo |
Download the complete datasheet for NXP 2PD601AQW,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.