N-channel RF MOSFET transistor designed for high-frequency applications. Features a 30V drain-source voltage rating and a maximum operating temperature of 150°C. Packaged in a 3-pin PLD configuration with a power dissipation of 1.5W. Supplied on tape and reel for automated assembly.
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Technical Specifications
NXP AFT09MS007NT1 technical specifications.
General
| Max Operating Temperature | 150 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.40 |
| REACH | unknown |
| Military Spec | False |
Datasheet
NXP AFT09MS007NT1 Datasheet
Download the complete datasheet for NXP AFT09MS007NT1 to view detailed technical specifications.
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