N-channel RF MOSFET transistor designed for high-frequency applications. Features a 30V drain-source voltage rating and a maximum operating temperature of 150°C. Packaged in a 3-pin PLD configuration with a power dissipation of 1.5W. Supplied on tape and reel for automated assembly.
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Technical Specifications
NXP AFT09MS007NT1 technical specifications.
General
Max Operating Temperature
150
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.29.00.40
REACH
unknown
Military Spec
False
Datasheet
NXP AFT09MS007NT1 Datasheet
Download the complete datasheet for NXP AFT09MS007NT1 to view detailed technical specifications.
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