RF Diode Attenuator/Switch, DFN package, 2-pin surface mount. Features 50V reverse voltage, 100mA forward current, and 1.1V forward voltage at 50mA. Offers low series resistance of 0.7 Ohm at 100mA and 4.5 Ohm at 0.5mA, with 0.28pF diode capacitance. Operates across the SHF frequency range with a maximum power dissipation of 500mW and a temperature range of -65°C to 150°C.
PackageDFN
MountingSurface Mount
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Technical Specifications
NXP BAP55L,315 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
DFN
Package Description
Dual Flat Package No Lead
Lead Shape
No Lead
Pin Count
2
PCB
2
Package Length (mm)
1.02(Max)
Package Width (mm)
0.62(Max)
Package Height (mm)
0.47(Max)
Seated Plane Height (mm)
0.5(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Type
Attenuator|Switch
Configuration
Single
Maximum Reverse Voltage
50V
Maximum Forward Current
100mA
Maximum Forward Voltage
1.1@50mAV
Maximum Series Resistance @ Maximum IF
0.7@100mAOhm
Maximum Series Resistance @ Minimum IF
Maximum Diode Capacitance
0.28@20VpF
Typical Carrier Life Time
0.28us
Frequency Range
SHF
Maximum Power Dissipation
500mW
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
H1R01
EU RoHS
Yes
HTS Code
8541100070
Schedule B
8541100070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
NXP BAP55L,315 Datasheet
Download the complete datasheet for NXP BAP55L,315 to view detailed technical specifications.
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