The BAV70S,115 is a 6-pin rectifier diode from NXP, featuring a silicon diode element and a maximum reverse voltage of 100V. It has a maximum power dissipation of 0.35W and operates over a temperature range of -65°C to 150°C. The diode is available in a 6-pin R-PDSO-G6 package.
Quick Jump:
Technical Specifications
NXP BAV70S,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.35 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP BAV70S,115 Datasheet
Download the complete datasheet for NXP BAV70S,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.